We study how nitridation. applied to SiON gate layers. impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. Experimental data demonstrate that p-channel transistors with SiON layers characterized by a highe... https://unitedssports.shop/product-category/intermediate-goalie-trappers-junior/